F1010E DATA SHEET PDF

Nell High Power Products. The Nell IRF is a three-terminal silicon. They are designed as an extremely efficient. These transistors can be operated. Ultra low gate charge 86nC max. Low reverse transfer capacitance.

Author:Gogrel Yohn
Country:Cameroon
Language:English (Spanish)
Genre:Education
Published (Last):10 June 2010
Pages:442
PDF File Size:6.28 Mb
ePub File Size:1.85 Mb
ISBN:379-1-33748-357-3
Downloads:8813
Price:Free* [*Free Regsitration Required]
Uploader:Mam



Nell High Power Products. The Nell IRF is a three-terminal silicon. They are designed as an extremely efficient. These transistors can be operated. Ultra low gate charge 86nC max. Low reverse transfer capacitance. Fast switching capability. TO AB. D Drain. I D A , Package Limited. V DSS V. Q G nC max. S Source. V DSS. V DGR. Drain to Source voltage. Drain to Gate voltage. Gate to Source voltage. Avalanche current Note 2. Repetitive avalanche energy Note 2.

Single pulse avalanche energy Note 3. See fig. Total power dissipation. T J Operation junction temperature. T STG. Storage temperature.

T L Maximum soldering temperature, for 10 seconds 1. Mounting torque, or M3 screw. Note: 1. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75 A. Repetitive rating: pulse width limited by junction temperature.

Page 1 of 7. R th j-c. Thermal resistance, junction to case. R th c-s. Thermal resistance, case to heatsink. R th j-a. Thermal resistance, junction to ambient. Drain to source breakdown voltage. I DSS. Drain to source leakage current. I GSS. Gate to source forward leakage current. Gate to source reverse leakage current. R DS ON. V GS TH. Gate threshold voltage.

C ISS. Input capacitance. C OSS. Output capacitance. C RSS. Reverse transfer capacitance. Turn-on delay time. Rise time. Turn-off delay time. L D Internal drain inductance. L S Internal source inductance. Between lead, 6mm from. Q G Total gate charge. Gate to source charge.

Gate to drain charge Miller charge. V SD Diode forward voltage. Is Is D. Continuous source to drain current. Integral reverse P-N junction. I SM Pulsed source current. Q rr Reverse recovery charge. Page 2 of 7. Download IRF Datasheet. They are designed as an extremely efficient and reliable device for use in a wide variety of applications.

These transistors can be operated directly from integrated circuits.

HANTEK 3064 PDF

IRF1010E MOSFET. Datasheet pdf. Equivalent

Rectifier utilize advanced processing techniques to. This benefit, combined with the fast switching speed and. The D 2 Pak is a surface mount power package capable of. It provides the.

EBERRON CAMPAIGN GUIDE 4E PDF

F1010ES MOSFET. Datasheet pdf. Equivalent

.

BRUCE GREENWALD EPV PDF

F1010E Datasheet PDF - International Rectifier

.

PETER WOLLEN THE AUTEUR THEORY PDF

IRF1010E MOSFET. Datasheet pdf. Equivalent

.

Related Articles