13N50C DATASHEET PDF

No Preview Available! This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Typ Max -- 0. On-Region Characteristics 1. Transfer Characteristics 10 1 10 0 10 -1 0.

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General Description. These N-Channel enhancement mode power field effect. This advanced technology has been especially tailored to. These devices are well. D 2 -PAK. FQB Series. I 2 -PAK. FQI Series. V DSS. V GSS. Drain-Source Voltage. Drain Current. Drain Current - Pulsed. Note 1. Gate-Source Voltage. Single Pulsed Avalanche Energy. Note 2. Avalanche Current. Repetitive Avalanche Energy. Note 3. Operating and Storage Temperature Range. Maximum lead temperature for soldering purposes,.

Thermal Characteristics. Thermal Resistance, Junction-to-Case. Thermal Resistance, Junction-to-Ambient. Typ Max. A, October Electrical Characteristics.

Test Conditions. Min Typ Max Units. Off Characteristics. BV DSS. Drain-Source Breakdown Voltage. Breakdown Voltage Temperature. I DSS. Zero Gate Voltage Drain Current. I GSSF. I GSSR. Gate-Body Leakage Current, Forward. Gate-Body Leakage Current, Reverse. On Characteristics.

V GS th. R DS on. Gate Threshold Voltage. Static Drain-Source. Note 4. Dynamic Characteristics. C iss Input Capacitance. C oss. Output Capacitance. C rss Reverse Transfer Capacitance. Switching Characteristics. Turn-On Delay Time. Turn-Off Delay Time. Q g Total Gate Charge. Q gs Gate-Source Charge.

Q gd Gate-Drain Charge. Note 4, 5. Q rr Reverse Recovery Charge. Note 4 Repetitive Rating : Pulse width limited by maximum junction temperature.

Essentially independent of operating temperature. Download 13N50C Datasheet. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Typ Max -- 0. Repetitive Rating : Pulse width limited by maximum junction temperature 2.

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Datasheet pdf. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliab 1. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

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