Jan General Description. The AO uses advanced trench technology to. The source leads are separated to allow.
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Jan General Description. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Thermal Characteristics. Maximum Junction-to-Ambient A. Maximum Junction-to-Lead C. B V DSS. Drain-Source Breakdown Voltage.
Zero Gate Voltage Drain Current. Gate-Body leakage current. GS th. Gate Threshold Voltage. On state drain current. DS ON. Static Drain-Source On-Resistance.
Forward Transconductance. Diode Forward Voltage. Maximum Body-Diode Continuous Current. Input Capacitance. Output Capacitance.
Reverse Transfer Capacitance. Gate resistance. Total Gate Charge. Gate Source Charge. Gate Drain Charge. Turn-On DelayTime. Turn-On Rise Time. D off. Turn-Off DelayTime. Turn-Off Fall Time. Body Diode Reverse Recovery Time. Body Diode Reverse Recovery Charge. The value in any a given application depends on the user's specific board design.
The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. The SOA. Drain Current and Gate Voltage. Gate-Source Voltage. V G S Volts. V D S Volts.
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Start Free Trial Cancel anytime. Uploaded by Grupo Servialexs. Document Information click to expand document information Description: info rec. Date uploaded Nov 05, Did you find this document useful? Is this content inappropriate? Report this Document. Description: info rec. Flag for Inappropriate Content. Download Now. Related titles. Carousel Previous Carousel Next. Jump to Page. Search inside document. Drain-Source Voltage. Continuous Drain. Current A. Pulsed Drain Current B.
Power Dissipation. Junction and Storage Temperature Range. Normalized On-Resistance. Figure 2: Transfer Characteristics. Figure 4: On-Resistance vs. V GS Volts. T J Max. I D Amps. Capacitance pF. Power W. Z JA Normalized Transient. Thermal Resistance. Documents Similar To AO Mohammad Mousavik. Sandipan Deb. Luis Pazos. Sarthak Sourav. Gilvan Melo.
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AO4422 MOSFET. Datasheet pdf. Equivalent
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