For new designs, the following product s should be used instead of this product. Recommended Product 2SK is shortly to be discontinued. Document select all download for selected If the checkbox is invisible, the corresponding document cannot be downloaded in batch. Notes The Part Number column shows representative part numbers only, which may not be available for sale in the precise form shown. Each Part Number constitutes a product family which may contain multiple associated product configurations.

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Unit: mm. Drain current. DC Note 1. Pulse Note 1. Single pulse avalanche energy. Note 2. Avalanche current. Repetitive avalanche energy Note 3. Channel temperature. Storage temperature range. V DSS.

V DGR. V GSS. T stg. Weight: 4. Note: Using continuously under heavy loads e. Please design the appropriate. Methods and individual reliability data i. Thermal Characteristics. Max Unit. Thermal resistance, channel to case. Thermal resistance, channel to. Note 3: Repetitive rating: pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Please handle with caution. Test Condition. Gate leakage current. Gate threshold voltage. Forward transfer admittance.

Input capacitance. Reverse transfer capacitance. Output capacitance. I GSS. I DSS. R DS ON. C iss. C rss. C oss. Rise time. Min Typ. Switching time. Fall time. Continuous drain reverse current.

Note 1. Pulse drain reverse current. Forward voltage diode. Reverse recovery time. Reverse recovery charge. I DRP. V DSF. Part No. Lot No. A line indicates. Download K Datasheet. GATE 2. A line indicates lead Pb -free package or lead Pb -free finish.

ISO 5667-3 PDF

2SK2610 MOSFET. Datasheet pdf. Equivalent



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